FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies-Reference-Cited by-同舟云学术

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FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies

Published:2016-06 Issue: Volume:61 Page:30-34
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Karapetyan Shushanik,Kleeberger Veit,Schlichtmann Ulf

Funder

German Research Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. “International technology roadmap for semiconductors.” [Online]. Available: http://www.itrs.net

2. Silicon-on-insulator ‘gate-all-around device’;Colinge,1990

3. Sub 50-nm finfet: Pmos;Huang,1999

4. Statistical variability and reliability in nanoscale finfets;Wang,2011

5. Predicting future product performance: modeling and evaluation of standard cells in finfet technologies;Kleeberger,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability Challenges in FinFETs;Mitigating Process Variability and Soft Errors at Circuit-Level for FinFETs;2021

2. Designing with FinFETs and Process Variation Impact;Timing Performance of Nanometer Digital Circuits Under Process Variations;2018

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