Author:
Abbate C.,Busatto G.,Iannuzzo F.,Mattiazzo S.,Sanseverino A.,Silvestrin L.,Tedesco D.,Velardi F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. The early history of the high electron mobility transistor (HEMT);Mimura;IEEE Trans. Microwave Theory Tech.,2002
2. A 20GHz high electron mobility transistor amplifier for satellite communications;Niori;Int. Solid-State Circuits Conf. Tech. Dig.,1983
3. GaN as a displacement technology for silicon in power management;Lidow;Proc. ECCE,2011
4. Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs;Onoda;IEEE Trans. Nucl. Sci.,2013
5. SEE sensitivity of a COTS GaN transistor and silicon MOSFETs;Bazzoli,2007
Cited by
24 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献