Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology-Reference-Cited by-同舟云学术

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology

Published:2016-02 Issue: Volume:57 Page:39-46
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Park Kyungbae,Lim Chulseung^ORCID,Yun Donghyuk^ORCID,Baeg Sanghyeon

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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3. RAIDR: retention-aware intelligent DRAM refresh;Liu,2012

4. DDR3 SDRAM Specification;JEDEC,2012

5. Memory Systems: Cache, DRAM, Disk;Jacob,2010

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