Author:
Manhas S.K.,Singh N.,Lo G.Q.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Copper filling contact process to realize low resistance and low cost production fully compatible to SOC devices;Inohara;Tech Dig IEEE Int Electron Dev Meet,2001
2. Van den bosch G, Demuynck S, Tőkei Zs, Beyer G, Van Hove M, Groeseneken G. Impact of copper contacts on CMOS front-end yield and reliability. Tech Dig IEEE Int Electron Dev Meet 2006:93–6.
3. RF Performance Upgrading of Low-power 40nm-node CMOS devices by extremely low-resistance partially-thickened local (PTL)-interconnects;Hijioka;Proc IEEE Int Electron Dev Meet,2009
4. Degradation and Failure Analysis of Copper and Tungsten Contacts under High Fluence Stress;Kauerauf;Proc IEEE Int Reliab Phys Symp,2010
5. Yang WL, Wu W-F, You HC, Ou K-L, Lei TF, Chou C-P. Improving the electrical integrity of Cu–CoSi2 Contacted n+p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier. IEEE Trans Electron Dev 2002;49(11):1947–53.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献