Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations-Reference-Cited by-同舟云学术

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Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations

Published:2012-03 Issue:3 Volume:52 Page:489-496
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Marcault E.,Breil M.,Bourennane A.,Tounsi P.,Dorkel J.-M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Selected failure mechanisms of modern power modules;Ciappa;Microelectron Reliab,2002

2. Reliability of power cycling for IGBT power semiconductor modules;Morozumi;Ind Appl Soc, IEEE,2003

3. Bouarroudj M. Phd master thesis: study of thermo-mechanical fatigue of power electronic modules under high environmental temperatures for automotive applications, LTN, SATIE; 2008.

4. Packaging and interconnection technologies of power devices, challenges and future trends;Amro;World Acad Sci, Eng Technol,2009

5. Investigations on ageing of IGBTs under repetitive short-circuit operations;Arab;Power Electr Europe,2008

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