Author:
Kutty Karan,Yuan Jiann-Shiun,Chen Shuyu
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. RF power amplifiers;Kazimierczuk,2008
2. RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOS;Pantisano;Tech Dig Int Electron Dev Meetings,2003
3. On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing;Chen;IEEE Electron Dev Lett,2000
4. Electron transport through broken down ultra-thin SiO2 layers in MOS Devices;Miranda;Microelectron Reliab,2004
5. Field and temperature acceleration model for time-dependent dielectric breakdown;Kimura;IEEE Trans Electron Dev,1999
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献