InGaN green light emitting diodes with deposited nanoparticles-Reference-Cited by-同舟云学术

InGaN green light emitting diodes with deposited nanoparticles

Published:2007-10 Issue:2-3 Volume:5 Page:86-90
ISSN:1569-4410
Container-title:Photonics and Nanostructures - Fundamentals and Applications
language:en
Short-container-title:Photonics and Nanostructures - Fundamentals and Applications

Author:

Butun Bayram,Cesario Jean,Enoch Stefan,Quidant Romain,Ozbay Ekmel

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. III–Nitride UV Devices

3. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface

4. Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

5. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

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