Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory-Reference-Cited by-同舟云学术

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Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory

Published:2014-05 Issue: Volume:594 Page:82-86
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ren Kun,Rao Feng,Song Zhitang,Lu Shilong,Peng Cheng,Zhu Min,Wu Liangcai,Liu Bo,Feng Songlin

Funder

National Key Basic Research Program of China

National Integrate Circuit Research Program of China

National Natural Science Foundation of China

Science and Technology Council of Shanghai

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference13 articles.

1. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

2. Phase-change materials for rewriteable data storage

3. Phase Change Memory

4. Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

5. Acceleration of Crystallization Speed by Sn Addition to Ge–Sb–Te Phase-Change Recording Material

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1. Direct Laser Writing Dry Lithography of High‐Resolution Micro‐/Nanostructures in AgSb₄Te Thin Film for Tunable Perfect Absorber;physica status solidi (RRL) – Rapid Research Letters;2023-12-24

2. Sb₂Te₃/TiTe₂‐Heterostructure‐Based Phase Change Memory for Fast Set Speed and Low Reset Energy;physica status solidi (RRL) – Rapid Research Letters;2023-04-06

3. Accurate Phase Change Behavior Characterization Of Ultrathin Sb-Rich Films Based On Superlattice-like Al/Ge10Sb90 System;Journal of Electronic Materials;2021-10-30

4. Simultaneously good thermal stability and low power consumption for Sb/In48.9Sb15.5Te35.6 multilayer composite film;Journal of Non-Crystalline Solids;2021-09

5. Overview of the Role of Alloying Modifiers on the Performance of Phase Change Memory Materials;Journal of Electronic Materials;2020-11-09

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