Gamma radiation effect on activation energy, debye temperature and exciton-phonon coupling in InGaAs/GaAs/AlGaAs(δ-Si) HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference23 articles.
1. Influence of annealing condition on photoluminescence characteristics of AlGaAs/GaAs multiple quantum well
2. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
3. Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
4. Photocatalytic degradation of ethylene using titanium dioxide nanotube arrays with Ag and reduced graphene oxide irradiated by γ-ray radiolysis
5. Change of photoluminescence property of ferroelectric compounds with the gamma-ray irradiation
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4. Quantum magneto-transport properties of GaAs/AlxGa1-xAs Weakly coupled quantum wells for near wavelength infrared detection;Computational Condensed Matter;2021-09
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