Structural and photoelectrical properties of Ga2O3/SiC/Al2O3 multilayers-Reference-Cited by-同舟云学术

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Structural and photoelectrical properties of Ga2O3/SiC/Al2O3 multilayers

Published:2017-09 Issue: Volume:717 Page:8-13
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Huang Y.Q.^ORCID,An Y.H.,Wu Z.P.,Guo D.Y.,Zhi Y.S.,Cui W.,Zhao X.L.,Tang W.H.^ORCID

Funder

State Key Laboratory of Information Photonics and Optical Communications

Beijing University of Posts and Telecommunications

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference28 articles.

1. New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide

2. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts

3. Short-wavelength solar-blind detectors-status, prospects, and markets

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1. Toward emerging gallium oxide semiconductors: A roadmap;Fundamental Research;2021-11

2. Facile synthetic route to exfoliate high quality and super-large lateral size graphene-based sheets and their applications in SERS and CO2 gas sensing;RSC Advances;2021

3. Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review;Reviews on advanced materials and technologies;2021

4. Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System;Sensors;2020-10-29

5. In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition;IEEE Transactions on Electron Devices;2020-08

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