In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition-Reference-Cited by-同舟云学术

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In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition

Published:2020-08 Issue:8 Volume:67 Page:3056-3061
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Islam Zahabul,Xian Minghan,Haque Aman^ORCID,Ren Fan,Tadjer Marko^ORCID,Glavin Nicholas,Pearton Stephen^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9146596/9121688-aam.pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of High-Temperature Forward Bias Stress on the Electrical Performance Degradation of β-Ga₂O₃ Schottky Barrier Diodes;IEEE Transactions on Electron Devices;2024-09

2. On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes;Applied Physics Letters;2024-05-06

3. Influence of particle size distribution on dielectric, electrical, and microstructural properties of aerosol-deposited Ga2O3 film for advanced electronic device;Ceramics International;2024-05

4. Temperature-induced degradation of GaN HEMT: An in situ heating study;Journal of Vacuum Science & Technology B;2024-04-26

5. Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers;Journal of Vacuum Science & Technology A;2023-06-06

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