A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3-Reference-Cited by-同舟云学术

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A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3

Published:2018-01 Issue: Volume:731 Page:118-125
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jang Soohwan,Jung Sunwoo,Beers Kimberly,Yang Jiancheng,Ren Fan,Kuramata A.,Pearton S.J.^ORCID,Baik Kwang Hyeon

Funder

Basic Science Research Program

National Research Foundation of Korea

Ministry of Education

Nano Material Technology Development Program

Ministry of Science, ICT and Future Planning

Department of Defense, Defense Threat Reduction Agency

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference49 articles.

1. Group-III sesquioxides: growth, physical properties and devices;von Wenckstern;Adv. Electron. Mater.,2017

2. Gallium oxide: properties and applications - a review;Stepanov;Rev. Adv. Mater. Sci.,2016

3. Communication—a (001) β-Ga2O3 MOSFET with +2.9 V threshold voltage and HfO2 gate dielectric;Tadjer;ECS J. Solid State Sci. Technol,2016

4. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth;Kuramata;Jpn. J. Appl. Phys.,2016

5. Opportunities and future directions for Ga2O3;Mastro;ECS J. Solid State Sci. Technol,2017

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3. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

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