Carrier conduction mechanisms of WSe2/p-type Ge epilayer heterojunction depending on the measurement temperature and applied bias-Reference-Cited by-同舟云学术

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Carrier conduction mechanisms of WSe2/p-type Ge epilayer heterojunction depending on the measurement temperature and applied bias

Published:2020-11 Issue: Volume:842 Page:155843
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Janardhanam V.,Jyothi I.,Kim Yonghun,Lee Sung-Nam,Yun Hyung-Joong,Hong Woong-Ki,Choi Chel-Jong

Funder

National Research Foundation

Ministry of Education

Korea Evaluation Institute of Industrial Technology

Korea Basic Science Institute

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference54 articles.

1. Semiconductor-insulator-semiconductor diode consisting of monolayer MoS2, h-BN, and GaN heterostructure;Jeong;ACS Nano,2015

2. Zener tunneling and photoresponse of a WS2/Si Van der Waals heterojunction;Lan;ACS Appl. Mater. Interfaces,2016

3. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity;Kang;Nature,2015

4. Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS2 films onto arbitrary substrates;Gurarslan;ACS Nano,2014

5. MoS2-InGaZnO heterojunction phototransistors with broad spectral responsivity;Yang;ACS Appl. Mater. Interfaces,2016

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1. Temperature Dependence of Self-Powered Photodetection Performance in Hybrid ε -Ga₂O₃/PEDOT:PSS Heterojunction;IEEE Transactions on Electron Devices;2024-09

2. Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer;Materials Today Communications;2024-03

3. Carrier transport across PtSe2/n-type GaN heterojunction;Vacuum;2023-12

4. Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate;Materials Science in Semiconductor Processing;2023-08

5. Broadband photodetector based on MoS2/Ge heterojunction for optoelectronic applications;Vacuum;2023-03

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