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Structural, optical and electrical properties of Al–In–Sn–O (AITO) films fabricated via MOCVD technique

  • Published:2020-08 Issue: Volume:831 Page:154821
  • ISSN:0925-8388
  • Container-title:Journal of Alloys and Compounds
  • language:en
  • Short-container-title:Journal of Alloys and Compounds

Author:

Li Zhao,Liu Shiming,Li Shutao,Wu Xueying,Liu Yunyan,Xiu Junshan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

1. Frontier of transparent oxide semiconductors;Ohta;Solid State Electron.,2003

2. Device applications of transparent oxide semiconductors: excitonic blue LED and transparent flexible TFT;Kamiya;J. Electroceram.,2006

3. Transparent oxide optoelectronics, mater;Ohta;Today Off.,2004

4. 3.8-MV/cm Breakdown strength of MOVPE-grown Sn-doped β-Ga2O3 MOSFETs;Green;IEEE Electron. Device Lett.,2016

5. Metal oxide semiconductor thin-film transistors for flexible electronics;Petti;Appl. Phys. Rev.,2016
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