Light-absorber engineering induced defect passivation for efficient antimony triselenide solar cells-Reference-Cited by-同舟云学术

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Light-absorber engineering induced defect passivation for efficient antimony triselenide solar cells

Published:2024-09 Issue: Volume:1000 Page:175130
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Duan Chunyan,Luo Yandi,Hu Changji,Hu Wenyong,Ishaq Muhammad,Chen Shuo,Su Zhenghua,Li JianLiang,Tang Rong,Zhao Jun,Liang Guangxing

Funder

National Natural Science Foundation of China

Guangdong Ordinary University

Publisher

Elsevier BV

Reference41 articles.

1. Heterojunction annealing enabling record open-circuit voltage in antimony triselenide solar cells;Tang;Adv. Mater.,2022

2. Flexible substrate-structured Sb2S3 solar cells with back interface selenization;Deng;Adv. Funct. Matert.,2023

3. Carrier transport enhancement mechanism in highly efficient antimony selenide thin-film solar cell;Luo;Adv. Funct. Matert.,2023

4. Thermally driven point defect transformation in antimony selenosulfide photovoltaic materials;Che;Adv. Mater.,2023

5. Emerging chalcogenide thin films for solar energy harvesting devices;Hadke;Chem. Rev.,2022

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