Theoretical investigations of the optical spectra and EPR parameters for Yb3+ ions in GaN epilayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference42 articles.
1. Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN
2. Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping
3. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
4. Evaluation of absorption and emission properties of Yb/sup 3+/ doped crystals for laser applications
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1. Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films;Journal of Applied Physics;2018-07-21
2. The effect of d and f states of ytterbium on the electronic and magnetic properties of Al1−xYbxN: DFT+U study;International Journal of Modern Physics B;2018-04-13
3. Photoluminescence studies and crystal field calculations of Yb-doped InGaN nanorods;Materials Science and Engineering: B;2017-08
4. Covalent bonding and J – J mixing effects on the EPR parameters of Er 3 + ions in GaN crystal;Chinese Physics B;2016-07
5. Spectra, energy levels and crystal field calculation of Er3+ doped in AlN nanoparticles;Journal of Luminescence;2016-03
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