Microstructural and mechanical evolution of silver sintering die attach for SiC power devices during high temperature applications-Reference-Cited by-同舟云学术

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Microstructural and mechanical evolution of silver sintering die attach for SiC power devices during high temperature applications

Published:2019-02 Issue: Volume:774 Page:487-494
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhang Hongqiang,Wang Wengan,Bai Hailin,Zou Guisheng,Liu Lei,Peng Peng,Guo Wei^ORCID

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference34 articles.

1. High-temperature electronics a role for wide bandgap semiconductors;Neudeck;Proc. IEEE,2002

2. Low-temperature and pressureless sintering technology for high-performance and high-temperature interconnection of semiconductor devices;Lu,2007

3. Overview of SiC power devices and its applications in power electronic converters;Qin,2013

4. Silver micropowders as SiC die attach material for high temperature applications;Kisiel,2012

5. A review on die attach materials for SiC-based high-temperature power devices;Chin;Metall. Mater. Trans. B,2010

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