Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates-Reference-Cited by-同舟云学术

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Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates

Published:2016-02 Issue: Volume:657 Page:325-329
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Dong Chen,Han Xiuxun,Gao Xin,Ohshita Yoshio,Yamaguchi Masafumi

Funder

National Natural Science Foundation of China

Ministry of Economy, Trade and Industry, Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference27 articles.

1. GaInNAs: a novel material for long-wavelength semiconductor lasers

2. 1-eV solar cells with GaInNAs active layer

3. Effect of nitrogen interactions on photoluminescence linewidth broadening in dilute nitride semiconductors

4. Rapid thermal annealing of GaNxAs1−x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Method for Improving the Quality of Porous Gallium Arsenide Wafer for Anti-Reflecting Coating of Solar Cells;2022 IEEE 4th International Conference on Modern Electrical and Energy System (MEES);2022-10-20

2. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy;Journal of Alloys and Compounds;2021-12

3. Simulation of the GaAsN-based Schottky solar cell prototype;International Journal of Ambient Energy;2019-09-25

4. CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS;Surface Review and Letters;2018-05-11

5. Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes;Physica B: Condensed Matter;2017-12

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