Effect of nitrogen interactions on photoluminescence linewidth broadening in dilute nitride semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.245206/fulltext
Reference37 articles.
1. Development of InGaAsN-based 1.3 m VCSELs
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4. III N V semiconductors for solar photovoltaic applications
5. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
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1. Structural, optical and electrical characterization of dilute nitride GaP1−x−yAsyNx structures grown on Si and GaP substrates;Journal of Materials Science: Materials in Electronics;2017-10-25
2. Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells;Solar Energy Materials and Solar Cells;2016-04
3. Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates;Journal of Alloys and Compounds;2016-02
4. N incorporation and associated localized vibrational modes in GaSb;Physical Review B;2014-01-22
5. Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells;IEEE Photonics Journal;2012-12
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