Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications-Reference-Cited by-同舟云学术

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Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications

Published:2016-04 Issue: Volume:663 Page:419-423
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Kim Sungjun,Kim Hyungjin,Jung Sunghun,Kim Min-Hwi,Lee Sang-Ho,Cho Seongjae,Park Byung-Gook

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference22 articles.

1. Nanoionics-based resistive switching memories

2. Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

3. Complementary resistive switches for passive nanocrossbar memories

4. Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films

5. Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

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3. Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy;Fluctuation and Noise Letters;2023-12-20

4. Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer;The Journal of Chemical Physics;2023-12-06

5. Formation of Zn-Containing Clusters in an Implanted Si3N4/Si Film;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-12

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