Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy

Published:2013-12 Issue: Volume:580 Page:82-87
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lu Z.Y.,Chen P.P.,Liao Z.M.,Shi S.X.,Sun Y.,Li T.X.,Zhang Y.H.,Zou J.,Lu W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference35 articles.

1. Toward Nanowire Electronics

2. Infrared Photodetectors in Heterostructure Nanowires

3. Gas Detection with Vertical InAs Nanowire Arrays

4. High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

5. Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silver-assisted growth of high-quality InAs1- x Sb x nanowires by molecular-beam epitaxy;Nanotechnology;2020-08-25

2. Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires;Nanotechnology;2020-03-13

3. Band Structure of Wurtzite GaBiAs Nanowires;Nano Letters;2019-08-19

4. Applying the X-ray diffraction analysis for estimating the height and width of nanorods in low symmetry crystal multiphase materials;Journal of Crystal Growth;2017-11

5. Phase purification of GaAs nanowires by prolonging the growth duration in MBE;Journal of Materials Chemistry C;2017

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3