Silver-assisted growth of high-quality InAs1- x Sb x nanowires by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Silver-assisted growth of high-quality InAs1- x Sb x nanowires by molecular-beam epitaxy

Published:2020-08-25 Issue:46 Volume:31 Page:465602
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Wen Lianjun,Liu Lei,Liao Dunyuan,Zhuo Ran,Pan Dong^ORCID,Zhao Jianhua^ORCID

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Beijing Natural Science Foundation

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/1361-6528/abac32/pdf

Reference46 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

3. Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

4. Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

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1. In‐Plane Selective Area Epitaxy of InAsSb Nanowire Networks for High‐Performance Scalable Infrared Photodetectors;Advanced Optical Materials;2024-03-27

2. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy;Nanotechnology;2023-11-24

3. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation;Nanotechnology;2023-03-14

4. Large-Composition-Range Pure-Phase Homogeneous InAs_1–xSb_x Nanowires;The Journal of Physical Chemistry Letters;2022-01-12

5. Progress and perspectives of 2D materials as anodes for potassium-ion batteries;Energy Storage Materials;2021-06

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