Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-Bi thin films-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-Bi thin films

Published:2018-04 Issue: Volume:742 Page:780-789
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Yue Li,Chen Xiren,Zhang Yanchao,Zhang Fan,Wang Lijuan,Shao Jun,Wang Shumin^ORCID

Funder

National Basic Research Program of China

Key Program of Natural Science Foundation of China

National Key Research Program of China

Key Research Program of the Chinese Academy of Sciences

National Natural Science Foundation of China

Foundation of National Laboratory for Infrared Physics of the Chinese Academy of Sciences

Swedish Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference35 articles.

1. Band gap of GaAs1−xBix 0 < x ≤ 3.6%;Francoeur;Appl. Phys. Lett.,2003

2. Valence band anticrossing in GaBixAs1−x;Alberi;Appl. Phys. Lett.,2007

3. Influence of bismuth incorporation on the valence and conduction band edges of GaBixAs1−x;Pettinari;Appl. Phys. Lett.,2008

4. Composition dependence of photoluminescence of GaBixAs1−x alloys;Lu;Appl. Phys. Lett.,2009

5. Giant spin-orbit bowing in GaBixAs1−x;Fluegel;Phys. Rev. Lett.,2006

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1. Determination of the Complex Refractive Index of GaSb_1−xBi_x by Variable‐Angle Spectroscopic Ellipsometry;physica status solidi (a);2024-07-23

2. An Ab Initio Study on the Properties of Sb-Rich GaBixSb1−x;Journal of Electronic Materials;2024-05-07

3. Infrared emission efficiency of δ - doped GaSbBi single quantum well by photoluminescence spectroscopy;J INFRARED MILLIM W;2022

4. The scanning tunneling microscopy and spectroscopy of GaSb1– x Bi x films of a few-nanometer thickness grown by molecular beam epitaxy;Journal of Semiconductors;2021-09-01

5. Emerging 2D pnictogens for biomedical applications;Chinese Chemical Letters;2021-09

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