Interfacial interaction and effects of GaAs/Graphene hetero-structures studied by First-principle calculations-Reference-Cited by-同舟云学术

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Interfacial interaction and effects of GaAs/Graphene hetero-structures studied by First-principle calculations

Published:2019-07 Issue: Volume:795 Page:351-360
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Liu Qing-Lu,Zhao Zong-Yan^ORCID,Yi Jian-Hong

Funder

National Natural Science Foundation of China

Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics

18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference22 articles.

1. Nanometre-scale electronics with III-V compound semiconductors;del Alamo;Nature,2011

2. High electron mobility InAs nanowire field-effect transistors;Dayeh;Small,2007

3. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices;Duan;Nature,2001

4. Detailed balance limit of efficiency of p-n junction solar cells;Shockley;J. Appl. Phys.,1961

5. Fine structure constant defines visual transparency of graphene;Nair;Science,2008

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phonon localization and resonance in thermal transport of pillar-based GaAs nanowires;Journal of Physics: Condensed Matter;2022-09-02

2. Single-molecule magnet Mn12 on GaAs-supported graphene: Gate field effects from first principles;Physical Review B;2022-01-03

3. Graphene transfer passivates GaAs;Applied Physics Letters;2020-10-26

4. Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector;J INFRARED MILLIM W;2020

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