IR photoresponse characteristics of Mg2Ge pn-junction photodiodes fabricated by rapid thermal annealing

Author:

El-Amir Ahmed A.M.ORCID,Ohsawa TakeoORCID,Oshima Yuichi,Nakamura Masaru,Shimamura Kiyoshi,Ohashi NaokiORCID

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. Extended backside-illuminated InGaAs on GaAs IR detectors;John,2003

2. Night-vision camera combines thermal and low-light-level images;Vandersmissen;Photonik Int,2008

3. Thermoelectric performance of Sb- and La-doped Mg2Si0.5Ge0.5;Zhou;J. Electron. Mater.,2012

4. n-type thermoelectric material Mg2Sn0.75Ge0.25 for high power generation;Liu;Proc. Natl. Acad. Sci. U. S. A.,2015

5. Preparation and some properties of Mg2Ge single crystals and of Mg2Ge p-n junctions;Kroemer;J. Appl. Phys.,1965

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