Control of Ag acceptor concentration and pn-junction depth in single crystalline Mg2Si photodiodes

Abstract

We have investigated the relationship between the Ag concentration and the pn-junction depth in the Mg2Si pn-junction photodiodes fabricated by thermal diffusion of the Ag acceptor. The Ag concentration profiles and pn-junction depths in the samples annealed between 400 and 550 °C were studied by secondary ion mass spectroscopy and electron beam-induced current (EBIC) images. We observed two kinds of lattice diffusions of substitutional and interstitial Ag atoms with two different diffusion coefficients, of which activation energies were ∼0.97 and 0.75 eV, respectively. The depth of pn-junction observed by EBIC images increased with annealing temperature and annealing time. On the other hand, the average Ag concentration did not depend on the annealing time but depended on the annealing temperature. These results indicate that the average Ag concentration and pn-junction depth in Mg2Si photodiodes can be controlled by annealing temperature and annealing time, respectively. This study would contribute to the development of Mg2Si pn-junction photodiodes.