An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device-Reference-Cited by-同舟云学术

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An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

Published:2016-10 Issue: Volume:681 Page:516-521
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Han Pengde^ORCID,Sun Bai,Cheng Sen,Yu Fangli,Jiao Baoxiang,Wu Qisheng

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Research Foundation of Yancheng Institute of Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference38 articles.

1. Digital versus analog resistive switching depending on the thickness of nickel oxide nanoparticle assembly

2. Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

3. Enhanced resistive switching effect upon illumination in self-assembled NiWO4nano-nests

4. Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

5. Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

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2. Recent progress in optoelectronic memristors for neuromorphic and in-memory computation;Neuromorphic Computing and Engineering;2023-05-25

3. Self-Powered Phase Transition Driven by Triboelectric Nanogenerator;ACS Applied Electronic Materials;2023-05-10

4. Photon avalanche assisted upconversionviacustomizing the green emission;RSC Advances;2023

5. Chemical Vapor Deposition of Crystalized Nanoscale α-SnWO₄ Thin Films and Their Photoelectrocatalytic Properties;ACS Applied Energy Materials;2022-11-03

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