Flexible one diode–one resistor resistive switching memory arrays on plastic substrates
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. Korea Advanced Institute of Science and Technology (KAIST)
3. Daejeon 305-701, Republic of Korea
Abstract
Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA02536A
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