Band structures and spatial carrier confinement in GaAs/GaP core-shell nanowires: Core/shell composition and size effects-Reference-Cited by-同舟云学术

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Band structures and spatial carrier confinement in GaAs/GaP core-shell nanowires: Core/shell composition and size effects

Published:2016-10 Issue: Volume:682 Page:571-578
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Yang Xiaodong,Shu Haibo,Chen Xiaoshuang

Funder

National Natural Science Foundation of China

Fund of Shanghai Science and Technology Foundation

Open Project Program of the National Laboratory of Infrared Physics of the Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference41 articles.

1. Two-versus three-dimensional quantum confinement in indium phosphide wires and dots;Yu;Nat. Mater.,2003

2. III-V nanowires—extending a narrowing road;Wernersson;Proc. IEEE,2010

3. Recent advances in semiconductor nanowire heterostructures;Johansson;CrystEngComm,2011

4. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111);Krogstrup;Nano Lett.,2010

5. High vertical yield InP nanowire growth on Si(111) using a thin buffer layer;Fonseka;Nanotechnology,2013

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1. Evidence of two-dimensional lateral quantum confinement in self-formed core–shell InGaN nanowires on Si (111) emitting in the red;Applied Physics Letters;2024-05-27

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3. Adjusting shell composition and content of Co-based bimetal core–shell microspheres toward the broadband microwave absorption;Journal of Materials Science;2021-03-04

4. Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction;Nanotechnology;2021-02-26

5. Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires;The European Physical Journal B;2019-09

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