Effects of annealing conditions on resistive switching characteristics of SnOx thin films-Reference-Cited by-同舟云学术

Effects of annealing conditions on resistive switching characteristics of SnOx thin films

Published:2016-07 Issue: Volume:673 Page:54-59
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jin Jidong,Zhang Jiawei,Kemal Remzi E.,Luo Yi,Bao Peng,Althobaiti Mohammed,Hesp David,Dhanak Vinod R.,Zheng Zhaoliang,Mitrovic Ivona Z.,Hall Steve,Song Aimin

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference42 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. The mechanism of electroforming of metal oxide memristive switches

3. Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

4. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

5. Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

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