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Current transport and deep levels in p-Si/n-Zn0.9Mg0.1O/n-ZnO heterojunction

  • Published:2017-01 Issue: Volume:691 Page:946-951
  • ISSN:0925-8388
  • Container-title:Journal of Alloys and Compounds
  • language:en
  • Short-container-title:Journal of Alloys and Compounds

Author:

Paradowska K.M.,Płaczek-Popko E.,Pietrzyk M.A.,Gwóźdź K.,Kozanecki A.

Funder

Wroclaw University of Technology

National Laboratory of Quantum Technologies

NCN

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference46 articles.

1. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers;Willander;Nanotechnology,2009

2. Fabrication and characterization of n-ZnO/pAlGaN heterojunction light-emitting diodes on 6H-SiC substrates;Alivov;Appl. Phys. Lett.,2003

3. Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO;Ohta;Appl. Phys. Lett.,2000

4. Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions;Ye;Appl. Phys. Lett.,2006

5. Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy;Alivov;Appl. Phys. Lett.,2005

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