Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference42 articles.
1. Single-photon emission from InGaAs quantum dots grown on (111) GaAs
2. Quantum Dots for Single- and Entangled-Photon Emitters
3. In(Ga)As/GaAs quantum dots grown on a (111) surface as ideal sources of entangled photon pairs
4. Nanowire Quantum Dots as an Ideal Source of Entangled Photon Pairs
5. Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions;Applied Surface Science;2023-01
2. Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures;Japanese Journal of Applied Physics;2020-01-24
3. Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method;The European Physical Journal B;2019-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3