Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Author:

Hu Jing,Lin Cong,Peng Liyu,Wei Tao,Li Wanfei,Ling Yun,Liu Qianqian,Cheng Miao,Song Sannian,Song Zhitang,Zhou Jian,Cheng Yan,Zheng Yonghui,Sun Zhimei,Liu Bo

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference64 articles.

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3. Phase-change memory towards a storage-class memory;Fong;IEEE Trans. Electron Devices,2017

4. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing;Zhang;Nat. Rev. Mater.,2019

5. Universal memory based on phase change materials: from phase change random access memory to optoelectronic hybrid storage;Liu;Chin. Phys. B,2021

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