Transition between positive and negative magnetoresistance of zirconium oxynitride films in the variable-range hopping regime-Reference-Cited by-同舟云学术

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Transition between positive and negative magnetoresistance of zirconium oxynitride films in the variable-range hopping regime

Published:2023-02 Issue: Volume:935 Page:168137
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhang Jicheng,Yang Qi,Wu Jiankun,Li Jia,Li Zhaoguo

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference45 articles.

1. Electronic Properties of Doped Semiconductors;Shklovskii,1984

2. Density of states near the Fermi level from measurements of variable-range-hopping magnetoresistance in germanium;Shlimak;Phys. Rev. B,1993

3. Hopping transport and the Hall effect near the insulator-metal transition in electrochemically gated poly(3-hexylthiophene) transistors;Wang;Nat. Commun.,2012

4. Magnetoresistance in degenerate CdS: localized magnetic moments;Khosla;Phys. Rev. B,1970

5. Anomalously large negative magnetoresistance of 1T-TaS2 at ultra low temperatures;Kobayashi;Solid State Commun.,1979

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