Author:
Zhang Yumei,Xu Hongda,Li Hongyang,Tan Shanshan,Zhao Qing,Du Changxin,Li Haibo
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference22 articles.
1. Perpendicular magnetic tunnel junctions with Mn-modified ultrathin MnGa layer;Suzuki;Appl. Phys. Lett.,2018
2. T. Hanyu,T. Endoh, Y. Ando, S. lkeda, S. Fukami, H. Sato, H. Koike, Y. Ma, D. Suzuki, H. Ohno, 7-Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology, Advances in non-volatile memory and storage technology (Second Edition), England, 2019, pp. 237–281.
3. Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product;Zhu;Adv. Mater.,2012
4. Electronic structures and magnetism of CuAu-type MnNi and MnGa;Sakuma;J. Magn. Magn. Mater.,1998
5. Long-lived ultrafast spin precession in manganese alloys films with a large perpendicular magnetic anisotropy;Mizukami;Phys. Rev. Lett.,2011