Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology

Author:

Hanyu T.,Endoh T.,Ando Y.,Ikeda S.,Fukami S.,Sato H.,Koike H.,Ma Y.,Suzuki D.,Ohno H.

Publisher

Elsevier

Reference152 articles.

1. Magnetic tunnel junction for nonvolatile CMOS logic;Ohno,2010

2. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-RAM;Hosomi,2005

3. 2 Mb SPRAM (SPin-Transfer Torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read;Kawahara;IEEE J. Solid State Circuits,2008

4. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM;Kishi,2008

5. A 32-Mb SPRAM with 2T1R memory cell, localized bi-directional write driver and ‘1’/‘0’ dual-array equalized reference scheme;Takemura;IEEE J. Solid-State Circuits,2010

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