Performance improvement of InGaN-based multiple quantum wells embedded nanoporous n-GaN layers-Reference-Cited by-同舟云学术

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Performance improvement of InGaN-based multiple quantum wells embedded nanoporous n-GaN layers

Published:2022-11 Issue: Volume:924 Page:166567
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Cui Jishi,Zhou Jianping,Xiao Hongdi

Funder

State Key Laboratory of Advanced Optical Communication Systems and Networks

Natural Science Foundation of Fujian Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference30 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers;Canham;Appl. Phys. Lett.,1990

2. Porous formation in p-type gallium nitride films via 50 Hz operated alternating current-assisted photo-electrochemical etching in methanol-sulfuric acid solution;Lim;J. Electrochem. Soc.,2018

3. Porous quaternary Al0.1In0.1Ga0.8N film formation via photoelectrochemical etching in HF: C2H5OH electrolyte;Lim;J. Am. Ceram. Soc.,2016

4. Structural and optical investigation of porous quaternary Al0.10In0.10Ga0.80N films produced via ultraviolet-assisted photo-electrochemical etching in acidic solutions;Quah;J. Alloy. Comp.,2016

5. Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route;Lim;J. Alloy. Comp.,2015

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1. Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors;Crystal Growth & Design;2024-02-26

2. III-nitride nanowires for emissive display technology;Journal of Information Display;2023-11-21

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