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New insights in GeTe growth mechanisms

Published:2022-11 Issue: Volume:924 Page:166614
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Roland Guillaume,Portavoce Alain,Bertoglio Maxime,Descoins Marion,Remondina Jacopo,Dutartre Didier,Lorut Frédéric,Putero Magali

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference51 articles.

1. Low-cost and nanoscale non-volatile memory concept for future silicon chips;Lankhorst;Nat. Mater.,2005

2. Phase-change random access memory: a scalable technology;Raoux;IBM J. Res. Dev.,2008

3. Phase-change materials for rewriteable data storage;Wuttig;Nat. Mater.,2007

4. Nanosecond switching in GeTe phase change memory cells;Bruns;Appl. Phys. Lett.,2009

5. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues;Noé;Semicond. Sci. Technol.,2018

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward Memristive Phase‐Change Neural Network with High‐Quality Ultra‐Effective Highly‐Self‐Adjustable Online Learning;Advanced Physics Research;2024-01-23

2. Te and Ge solid-state reaction: comparison between the 2D and 3D growth of α-GeTe;Journal of Materials Chemistry C;2023

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