A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series-Reference-Cited by-同舟云学术

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A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Published:2015-03 Issue: Volume:625 Page:18-25
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Aydin H.,Tataroğlu A.,Al-Ghamdi Ahmed A.,Yakuphanoglu F.,El-Tantawy Farid,Farooq W.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference55 articles.

1. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

2. Effect of Postdeposition Oxidation and Subsequent Reduction Annealing on Electric and Optical Properties of Amorphous ZnO–SnO[sub 2] Transparent Conducting Films

3. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

4. Effect of Zr addition on ZnSnO thin-film transistors using a solution process

5. Effect of gallium content on bias stress stability of solution-deposited Ga–Sn–Zn–O semiconductor transistors

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