Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100°C-Reference-Cited by-同舟云学术

Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100°C

Published:2015-09 Issue: Volume:643 Page:S133-S136
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Hsu Hsiao-Hsuan,Chiu Yu-Chien,Chiou Ping,Cheng Chun-Hu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference17 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

3. Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

4. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

5. Comprehensive Study on the Transport Mechanism of Amorphous Indium-Gallium-Zinc Oxide Transistors

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