Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference82 articles.
1. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
2. Properties of Au/oxide/InP metal‐interfacial layer‐semiconductor junctions
3. Electrical characterization of Au/n-ZnO Schottky contacts on n-Si
4. The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices
5. Electrical conductivity, optical and metal–semiconductor contact properties of organic semiconductor based on MEH-PPV/fullerene blend
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1. Temperature-dependent model for hole transport mechanism in a poly(1.8-diaminocarbazole)/Si structure;Philosophical Magazine;2016-07-28
2. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment;Semiconductor Science and Technology;2015-12-01
3. Low-Temperature Electrical Characteristics of Si-Based Device with New Tetrakis NiPc-SNS Active Layer;Journal of Electronic Materials;2015-10-20
4. Barrier characteristics of biopolymer-based organic/inorganic Au/CTS/n-InP hybrid junctions;Philosophical Magazine;2015-09-28
5. Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes;Synthetic Metals;2015-01
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