Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer-Reference-Cited by-同舟云学术

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Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Published:2013-01 Issue: Volume:548 Page:1-6
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Li M.X.,Miao J.,Wu S.Z.,Liu Q.L.,Jiang Y.,Yang H.,Qiao L.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High endurance of bipolar resistive switching in a Pt/LaNiO3/Nb:SrZrO3/Cu stack: The role of Cu modulating layer;Chemical Physics Letters;2020-01

2. Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin;Applied Physics Express;2019-06-21

3. High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure;Applied Surface Science;2018-03

4. Polarization modulation resistive switching in a lead-free ferroelectric Pt/Bi0.5Na0.5TiO3/La0.67Sr0.33MnO3 sandwiched heterostructure;Journal of Materials Science: Materials in Electronics;2017-05-24

5. Observation of AlO x material in electrical resistive switching for nonvolatile random access memory application;Journal of the Korean Physical Society;2017-03

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