Surface Fermi level pinning and carrier transport of indium-tin-oxide Ohmic contact to p-type GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference16 articles.
1. Light-Emitting Diodes;Schubert,2006
2. History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes
3. Indium tin oxide contacts to gallium nitride optoelectronic devices
4. Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts
5. Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications
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1. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity;Applied Physics Letters;2023-08-28
2. Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN;Applied Surface Science;2021-02
3. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer onp-GaN for InGaN/GaN Light-Emitting Diodes;Advanced Science;2017-12-19
4. Hybrid Oblique-Angle Deposited ITO/Silver Nanowire Transparent Conductive Electrodes for Brighter Light Emitters;IEEE Transactions on Electron Devices;2017-09
5. Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN;Applied Surface Science;2015-03
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