Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer onp-GaN for InGaN/GaN Light-Emitting Diodes-Reference-Cited by-同舟云学术

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer onp-GaN for InGaN/GaN Light-Emitting Diodes

Published:2017-12-19 Issue:2 Volume:5 Page:1700637
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Son Kwang Jeong¹,Kim Tae Kyoung¹,Cha Yu-Jung¹,Oh Seung Kyu¹²,You Shin-Jae³,Ryou Jae-Hyun²⁴,Kwak Joon Seop¹^ORCID

Affiliation:

1. Department of Printed Electronics Engineering; Sunchon National University; Jeonnam 57922 Korea

2. Department of Mechanical Engineering and Texas Center for Superconductivity at UH (TcSUH); University of Houston; Houston TX 77204-4006 USA

3. Department of Physics; Chungnam National University; Daejeon 34134 Korea

4. Materials Science and Engineering Program; University of Houston; Houston TX 77204 USA

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Reference42 articles.

1. Prospects for LED lighting

2. Blue Light: A Fascinating Journey (Nobel Lecture)

3. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

4. LED Lighting in Horticulture

5. Improvement of disturbing color effects depending on the axial color of an automotive headlamp lens

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