Crystallization process of in situ annealed Ge2Sb2Te5 films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference34 articles.
1. Investigation of switching phenomenon of Se75Te25−xGax amorphous system
2. Assessment of Self-Induced Joule-Heating Effect in the $I$–$V$ Readout Region of Polycrystalline $\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ Phase-Change Memory
3. N-doped Sb2Te phase change materials for higher data retention
4. Enhanced thermoelectric performance in Na-doped p-type nonstoichiometric AgSbTe2 compound
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1. Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified;Journal of Materials Science: Materials in Electronics;2022-03-18
2. Crystallization characteristic and structure of hafnium addition in germanium antimony thin films for phase change memory;Journal of Alloys and Compounds;2021-05
3. Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping;Journal of Non-Crystalline Solids;2020-12
4. Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation;IEEE Photonics Journal;2018-02
5. Microstructure evolution of the phase change material TiSbTe;SPIE Proceedings;2016-10-12
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