Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference34 articles.
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2. Effect of Annealing Temperature on Resistive Switching Behavior of Al/ La0.7sr0.3mno3 /Lanio3 Devices;SSRN Electronic Journal;2022
3. ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr1-xMxO3 (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices;Journal of Molecular Graphics and Modelling;2021-03
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