Optimised two layer overgrowth of a lateral strain-modulated nanostructure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference8 articles.
1. Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy
2. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
3. Nanoengineering of lateral strain modulation in quantum well heterostructures
4. Mechanisms of Self-Ordering of Quantum Nanostructures Grown on Nonplanar Surfaces
5. Strain Induced Compositional Modulations in AlGaAs Overlayers Induced by Lateral Surface Gratings
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