Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films-Reference-Cited by-同舟云学术

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Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Published:2009-11 Issue:1-2 Volume:486 Page:458-461
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Cao Xun,Li Xiaomin,Yu Weidong,Zhang Yiwen,Yang Rui,Liu Xinjun,Kong Jingfang,Shen Wenzhong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference18 articles.

1. Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films

2. Resistance Switching in Anodic Oxidized Amorphous TiO2Films

3. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

4. Resistive switching in transition metal oxides

5. Memristive switching mechanism for metal/oxide/metal nanodevices

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar Resistive Switching in TiO₂ Artificial Synapse Mimicking Pavlov’s Associative Learning;ACS Applied Materials & Interfaces;2023-01-03

2. Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures;Journal of Electronic Materials;2022-09-10

3. Memristive TiO2: Synthesis, Technologies, and Applications;Frontiers in Chemistry;2020-10-02

4. Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity;ACS Omega;2020-07-21

5. Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM);Nanoscience & Nanotechnology-Asia;2019-11-25

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