The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference40 articles.
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2. Physics of Semiconductor Devices;Sze,1981
3. Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes
4. Electrical characteristics of GaAs MIS Schottky diodes
5. On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode
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