PAC study of HfO2 nanofilms grown on Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference10 articles.
1. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
2. High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices
3. Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process
4. Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water
5. Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evolution of the local structure at Hf sites in SiHfOC upon ceramization of a hafnium-alkoxide-modified polysilsesquioxane: A perturbed angular correlation study;Journal of the European Ceramic Society;2015-01
2. Evolution of the quadrupole hyperfine interaction while milling a Si-HfO2 blend;Journal of Alloys and Compounds;2012-09
3. Perturbed γ-γ Angular Correlation;Methods in Physical Chemistry;2012-04-25
4. Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and Ab Initio Calculations;Defect and Diffusion Forum;2011-03
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